Grain boundaries in semiconductors /Proceeding of the materials research society annual meeting november 1981 Boston park plaza hotel Boston Massachusetts USA
Material type: TextPublication details: New York: North Holland, 1982Description: xi, 417pISBN:- 0-444-00697-4
Item type | Current library | Call number | Materials specified | Vol info | Status | Date due | Barcode |
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Proceedings | National Science Library | 621.315.592(082.2) M2 (Browse shelf(Opens below)) | Vol. 5 | Available | 102850 |
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621.315.59.001.5 J7 Investigation of the surface states on n type germanium | 621.315.59.03(082.2) L1 Physics of semimetals and narrow gap semiconductors | 621.315.59(082.2) L0 Amorphous and liquid semiconductors | 621.315.592(082.2) M2 Grain boundaries in semiconductors | 621.315.592(082.2) M3 Defects in semiconductors II | 621.315.592:620(082.2) M1 Defects in semiconductors | 621.315.59:546.4'7 (082.2) K7 II VI semiconducting compound 1967 international conference |
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