II VI semiconducting compound 1967 international conference
Material type: TextPublication details: New York: W A Benjamin Inc, 1967Description: xiv, 1489pSubject(s):Item type | Current library | Call number | Materials specified | Status | Date due | Barcode |
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Reference | National Science Library | 621.315.59:546.4'7 (082.2) K7 (Browse shelf(Opens below)) | Not for loan | 22513 |
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621.315.592(082.2) M2 Grain boundaries in semiconductors | 621.315.592(082.2) M3 Defects in semiconductors II | 621.315.592:620(082.2) M1 Defects in semiconductors | 621.315.59:546.4'7 (082.2) K7 II VI semiconducting compound 1967 international conference | 621.315.6(082.2) M2 Proceeding of the workshop course on technology of electrical insulation and high voltage pulse techniques BARC, Bombay India March 1-5, 1982 | 621.315.61 K0 Modern dielectric materials | 621.315.61(082.2) M5 Technical paper and proceeding of symposium on insulating material and systems 2&3rd July 1985 Baroda |
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