Defence grant-in-aid scheme project on high field effects in semiconductors / Indian institute of science
Material type: TextPublication details: Bangalore: Indian institute of science, Description: 30pSubject(s):Item type | Current library | Call number | Materials specified | Status | Date due | Barcode |
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Reports | National Science Library | T 621.3.032.27 L1 (Browse shelf(Opens below)) | Available | T 00113 |
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